Cambridge GaN Devices (CGD) and Neways Electronics (Neways) announced they will sign an agreement to develop high efficiency, photovoltaic solar inverter products based on gallium nitride technology at Electronica 2022. The partnership, which was forged after the two companies met while collaborating on the European-funded GaNext project, has already borne fruit. At Electronica, both on the Neways booth, and at CGD's booth (Hall C3, Booth 535), visitors will be able to see a demo of a 3kW photovoltaic inverter jointly developed by the two companies.

Using eight CGD65A055S2 GaN transistors, this transformer-less, ultra compact design achieves a power density of 1kW/L. With a Vin of 150-350VDC, a Vout of 230VAC and a switching frequency 350kHz the design has a maximum efficiency of 99.22%.